Philips pbss302nz free download

File name pbss302nz.pdf

PBSS302NZ 20 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 -- 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 20 V IC collector current - - 5.8 A ICM peak collector current single pulse; - - 11.6 A tp 1 ms RCEsat collector-emitter IC = 4 A; [1] - 30 43 m saturation resistance IB = 200 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS302NZ 20 V, 5.8 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 base 4 2, 4 2 collector 3 emitter 1 4 collector 1 2 3 3 sym016 3. Ordering information Table 3. Ordering information Type number Package Name