ST 2stw4466 free download

File name 2stw4466.pdf

2STW4466 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 80 V Complementary to 2STW1693 Typical ft = 20 MHz Fully characterized at 125 oC Applications 3 2 Audio power amplifier 1 TO-247 Description The device is a NPN transistor manufactured in low voltage planar technology using base island Figure 1. Internal schematic diagram layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage. Table 1. Device summary Order code Marking Package Packaging 2STW4466 2STW4466 TO-247 Tube September 2008 Rev 2 1/9 www.st.com 9 Electrical ratings 2STW4466 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 6 V IC Collector current 6 A ICM Collector peak current (tP < 5 ms) 12 A PTOT Total dissipation at Tc = 25