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STP20NM65N STF20NM65N N-channel 650 V, 0.250 15 A TO-220, TO-220FP , second generation MDmeshTM Power MOSFET Features VDSS RDS(on) Order codes ID @Tjmax max. STP20NM65N 710 V 0.270 15 A STF20NM65N 100 % avalanche tested 2 3 3 2 1 1 Low input capacitance and gate charge TO-220 TO-220FP Low gate input resistance Application Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs realized using the second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STP20NM65N 20NM65N TO-220 Tubes STF20NM65N 20NM65N TO-220FP Tubes May 2011 Doc ID 13845 Rev 2 1/16 www.st.com 16 Contents STP20NM65N, STF20NM65N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristecs (curves) ... 6 3 Test circuits ... 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 Doc ID 13845 Rev 2 STP20NM65N, STF20NM65N