Philips bft93 cnv free download

File name bft93_cnv.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 DESCRIPTION PINNING PNP transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code: X1p It is primarily intended for use in RF 1 base wideband amplifiers, such as in aerial lfpage 3 2 emitter amplifiers, radar systems, oscilloscopes, spectrum analyzers, 3 collector etc. The transistor features low intermodulation distortion and high 1 2 power gain; due to its very high transition frequency, it also has Top view MSB003 excellent wideband properties and low noise up to high frequencies. NPN complements are BFR93 and Fig.1 SOT23. BFR93A. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter 15 V VCEO collector-emitter voltage open base 12 V Ic DC collector current 35 mA Ptot total power dissipation up to Ts = 95 C; note 1 300 mW fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz; 5 GHz Tj = 25 C Cre feedback capacitance IC = 2 mA; VCE = 5 V; f = 1 MHz 1 pF GUM maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 500 MHz; 16.5 dB Tamb = 25 C F noise figure IC = 10 mA; VCE = 5 V; f = 500 MHz; 2.4 dB Tamb = 25 C Vo output voltage dim = 60 dB; IC = 30 mA; 300 mV VCE = 5 V; RL = 75 ; f(pqr) = 493.25 MHz Note 1. Ts is the