File information: | |
File name: | am81214-006.pdf [preview am81214-006] |
Size: | 61 kB |
Extension: | |
Mfg: | ST |
Model: | am81214-006 🔎 am81214006 |
Original: | am81214-006 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST am81214-006.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 12-06-2020 |
User: | Anonymous |
Multipart: | No multipart |
Information about the files in archive: | ||
Decompress result: | OK | |
Extracted files: | 1 | |
File name am81214-006.pdf AM81214-006 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY . . LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W MIN. WITH 10 dB GAIN .310 x .310 2LF L (S064) hermetically sealed ORDER CODE BRANDING AM81214-6 81214-6 DESCRIPTION PIN CONNECTION The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Ra- dar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and tempera- tures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM81214-006 is supplied in the grounded IM- 1. Collector 3. Emitter PACTM Hermetic Metal/Ceramic package with in- ternal input/output matching structures. 2. Base 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 |
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