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STS4DPFS30L P-CHANNEL 30V - 0.045 - 5A SO-8 STripFETTM MOSFET PLUS SCHOTTKY RECTIFIER Table 1: General Features Figure 1: Package MOSFET TYPE VDSS RDS(on) ID STS4DPFS30L 30 V < 0.055 5A SCHOTTKY IF(AV) VRRM VF(MAX) 3A 30 V 0.51 V s TYPICAL RDS(on) = 0.045 s) s CONDUCTION LOSSES REDUCED t( s SWITCHING LOSSES REDUCED LOW THRESHOLD DRIVE uc s s STANDARD OUTLINE FOR EASY SO-8 AUTOMATED SURFACE MOUNT ASSEMBLY d DESCRIPTION This MOSFET is the latest development of STMi- P ro croelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor le te Figure 2: Internal Schematic Diagram so shows extremely high packing density for low on- resistance, rugged avalanche characteristics and Ob less critical alignment steps therefore a remark- able manufacturing reproducibility. - APPLICATIONS s DC/DC CONVERTERS t( s) s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT d uc ro s POWER MANAGEMENT IN CELLULAR PHONES P s DC MOTOR DRIVE e let so Ob Table 2: Order Codes PART NUMBER MARKING PACKAGE PACKAGING STS4DPF30L 4DFS30L SO-8 TAPE & REEL Rev. 1 December 2004 1/9 STS4DPFS30L Table 3: MOSFET Absolute Maximum Ratings Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 k) 30 V VGS Gate- source Voltage