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STW24NK55Z N-channel 550 V - 0.18 - 23 A - TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS(on) ID Pw STW24NK55Z 550 V <0.22 23 A 285 W Extremely high dv/dt capability 100% avalanche tested 2 3 1 Gate charge minimized TO-247 Very low intrinsic capacitances Very good manufacturing repeatability Application Switching applications Description Figure 1. Internal schematic diagram The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs. Table 1. Device summary Order code Marking Package Packaging STW24NK55Z 24NK55Z TO-247 Tube January 2008 Rev 1 1/12 www.st.com 12 Contents STW24NK55Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STW24NK55Z Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 550 V VGS Gate-source voltage