ST stp165n10f4 free download

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STP165N10F4 N-channel 100 V, 4.4 m 120 A TO-220 , STripFETTM DeepGATETM Power MOSFET Features Order code VDSS RDS(on) max ID STP165N10F4 100 V < 5.5 m 120 A N-channel enhancement mode 100% avalanche rated 2 3 1 Low gate charge TO-220 Very low on-resistance Application Switching applications Description Figure 1. Internal schematic diagram The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFETTM DeepGATETM technology with a new gate structure. The product is tailored to minimize on-resistance. Table 1. Device summary Order code Marking Package Packaging STP165N10F4 165N10F4 TO-220 Tube November 2010 Doc ID 15781 Rev 2 1/12 www.st.com 12 Contents STP165N10F4 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 15781 Rev 2 STP165N10F4 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate- source voltage