Philips pmgd780sn free download

File name pmgd780sn.pdf

PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 -- 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits Surface-mounted package Footprint 40 % smaller than SOT23 Standard level threshold voltage Fast switching Low on-state resistance Dual device 1.3 Applications Driver circuits Switching in portable appliances 1.4 Quick reference data VDS 60 V ID 0.49 A Ptot 0.41 W RDSon 920 m 2. Pinning information Table 1. Pinning - SOT363 (SC-88), simplified outline and symbol Pin Description Simplified outline Graphic symbol 1 source1 (S1) 6 5 4 D1 D2 2 gate1 (G1) 3 drain2 (D2) 4 source2 (S2) 5 gate2 (G2) 1 2 3 6 drain1 (D1) SOT363 (SC-88) S1 G1 S2 G2 msd901 NXP Semiconductors PMGD780SN Dual N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version PMGD780SN SC-88 plastic surface-mounted package; 6 leads SOT363 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25