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File name:ces2317.pdf
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Descr: . Electronic Components Datasheets Active components Transistors CET ces2317.pdf
Group:Electronics > Components > Transistors
Uploaded:14-06-2020
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File name ces2317.pdf

CES2317 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.1A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V. RDS(ON) = 120m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G SOT-23 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS

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