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CES2317
P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-30V, -3.1A, RDS(ON) = 80m @VGS = -10V.
RDS(ON) = 90m @VGS = -4.5V.
RDS(ON) = 120m @VGS = -2.5V.
High dense cell design for extremely low RDS(ON).
D
Rugged and reliable.

Lead-free plating ; RoHS compliant.

SOT-23 package.

G
D
S

G

SOT-23 S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS