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2SD1758(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector dissipation 1.2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 1 A Emitter cut-off current IEBO VEB=4V, IC=0 1 A DC current gain hFE VCE=3V, IC=500mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=0.2A 0.8 V Transition frequency fT VCE=5V, IC=50mA, f=100MHz 100 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF CLASSIFICATION OF hFE Rank P Q R Range 82-180