Text preview for : 2sd1758.pdf part of LGE 2sd1758 . Electronic Components Datasheets Active components Transistors LGE 2sd1758.pdf
Back to : 2sd1758.pdf | Home
2SD1758(NPN)
TO-251/TO-252-2L Transistor
TO-251
1.BASE
2.COLLECTOR
3.EMITTER
1 2 3
Features
Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A)
MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 32 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 2 A
PC Collector dissipation 1.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150 Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V
Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 5 V
Collector cut-off current ICBO VCB=20V, IE=0 1 A
Emitter cut-off current IEBO VEB=4V, IC=0 1 A
DC current gain hFE VCE=3V, IC=500mA 82 390
Collector-emitter saturation voltage VCE(sat) IC=2A, IB=0.2A 0.8 V
Transition frequency fT VCE=5V, IC=50mA, f=100MHz 100 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF
CLASSIFICATION OF hFE
Rank P Q R
Range 82-180 120-270 180-390
2SD1758(NPN)
TO-251/TO-252-2L Transistor
Typical Characteristics