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STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8 - 2A DPAK/IPAK Zener-Protected MDmeshTMPower MOSFET TYPE VDSS RDS(on) ID STD2NM60 600V < 3.2 2A STD2NM60-1 600V < 3.2 2A s TYPICAL RDS(on) = 2.8 s HIGH dv/dt AND AVALANCHE CAPABILITIES 3 3 2 s 100% AVALANCHE TESTED 1 1 s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE DPAK IPAK s TIGHT PROCESS CONTROL AND HIGH TO-252 TO-251 MANUFACTORING YIELDS DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro- INTERNAL SCHEMATIC DIAGRAM cess with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products. APPLICATIONS The MDmeshTM family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage