ST stn3n40k3 free download

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STN3N40K3 N-channel 400 V, 3 1.8 A SOT-223 , SuperMESH3TM Power MOSFET Features Order code VDSS RDS(on) max ID PW STN3N40K3 400 V < 3.4 1.8 A 3.3 W 2 100% avalanche tested 3 Extremely high dv/dt capability 2 1 Gate charge minimized SOT-223 Very low intrinsic capacitance Improved diode reverse rcovery characteristics Zener-protected Application Switching applications Figure 1. Internal schematic diagram D(2) Description The device is made using the SuperMESH3TM Power MOSFET technology that is obtained via improvements applied to STMicroelectronics' SuperMESH3TM technology combined with a new G(1) optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order code Marking Package Packaging STN3N40K3 3N40K3 SOT-223 Tape and reel April 2011 Doc ID 17697 Rev 2 1/13 www.st.com 13 Contents STN3N40K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics ... 6 3 Test circuits ... 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . .