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STF26NM60N-H N-channel 600 V, 0.135 20 A MDmeshTM II Power MOSFET , in TO-220FP Features RDS(on) Type VDSS ID max STF26NM60N-H 600 V < 0.165 20 A 100% avalanche tested 3 Low input capacitance and gate charge 2 1 Low gate input resistance TO-220FP Application Switching applications Description Figure 1. Internal schematic diagram This series of devices implements second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STF26NM60N-H(1) 26NM60N TO-220FP Tube 1. The device meets ECOPACK