KEC kf3n40w free download

File name kf3n40w.pdf

SEMICONDUCTOR KF3N40W N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 2A Drain-Source ON Resistance : RDS(ON)=3.4 (max) @VGS =10V Qg(typ.) =4.4nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS 30 V @TC=25 2* ID Drain Current @TC=100 1.2* A Pulsed (Note1) IDP 6* Single Pulsed Avalanche Energy EAS 52 mJ (Note 2) Repetitive Avalanche Energy EAR 0.2 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power TA=25 2** W PD Dissipation Derate above25 0.02 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 10.0 /W Thermal Resistance, Junction-to- RthJA 62.5** /W Ambient * : Drain current limited by maximum junction temperature. ** : Surface Mounted on FR4 Board 2 Inch 2 Inch 1mm. PIN CONNECTION 2010. 6. 16 Revision No : 0 1/6 KF3N40W ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 400 - - V Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.4 - V/ Drain Cut-off Current IDSS VDS=400V, VGS=0V, - - 10 A Gate Threshold Voltage Vth VDS=VGS, ID