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SEMICONDUCTOR KF3N40W
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
VDSS(Min.)= 400V, ID= 2A
Drain-Source ON Resistance : RDS(ON)=3.4 (max) @VGS =10V
Qg(typ.) =4.4nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 400 V
Gate-Source Voltage VGSS 30 V
@TC=25 2*
ID
Drain Current @TC=100 1.2* A
Pulsed (Note1) IDP 6*
Single Pulsed Avalanche Energy
EAS 52 mJ
(Note 2)
Repetitive Avalanche Energy
EAR 0.2 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power TA=25 2** W
PD
Dissipation Derate above25 0.02 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 10.0 /W
Thermal Resistance, Junction-to-
RthJA 62.5** /W
Ambient
* : Drain current limited by maximum junction temperature.
** : Surface Mounted on FR4 Board 2 Inch 2 Inch 1mm.
PIN CONNECTION
2010. 6. 16 Revision No : 0 1/6
KF3N40W
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 400 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.4 - V/
Drain Cut-off Current IDSS VDS=400V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1A - 2.8 3.4
Dynamic
Total Gate Charge Qg - 4.4 5.8
VDS=320V, ID=2.2A
Gate-Source Charge Qgs - 1.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2.0 -
Turn-on Delay time td(on) - 10 -
VDD=200V, ID=2.2A
Turn-on Rise time tr - 11 -
RG=25 (Note4,5) ns
Turn-off Delay time td(off) - 20 -
VGS=10V
Turn-off Fall time tf - 17 -
Input Capacitance Ciss - 163 211
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 26 - pF
Reverse Transfer Capacitance Crss - 2.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 2
VGS Pulsed Source Current ISP - - 8
Diode Forward Voltage VSD IS=2A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=2.2A, VGS=0V, - 240 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 0.65 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 23mH, IS=2A, VDD=50V, RG = 25 , Starting Tj = 25 .
Note 3) IS 2A, dI/dt 200A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
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