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STW9N150 N-channel 1500 V - 1.8 - 8 A - TO-247 very high voltage PowerMESHTM Power MOSFET Features Type VDSS RDS(on) ID Pw STW9N150 1500 V < 2.5 8A 320 W 100% avalanche tested Avalanche ruggedness 3 Gate charge minimized 2 1 Very low intrinsic capacitances TO-247 High speed switching Very low on-resistance Application Switching applications Figure 1. Internal schematic diagram Description Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summary Order code Marking Package Packaging STW9N150 9N150 TO-247 Tube January 2008 Rev 2 1/12 www.st.com 12 Contents STW9N150 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 5 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STW9N150 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 1500 V VGS Gate- source voltage