ST am1214,175 free download

File name am1214,175.pdf

AM1214-175 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY . . LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 160 W MIN. WITH 7.3 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE BRANDING AM1214-175 1214-175 DESCRIPTION PIN CONNECTION The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. The AM1214-175 is supplied in the BIGPACTM Her- 1. Collector 3. Emitter metic M etal/Ceramic package with i nternal Input/Output matching structures. 2. Base 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25