Philips bf904wr free download

File name bf904wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF904WR N-channel dual-gate MOS-FET Product specification 2010 Sep 15 Supersedes data of 1995 Apr 25 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1 s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz 3 g2 gate 2 Superior cross-modulation performance during AGC. 4 g1 gate 1 APPLICATIONS VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage d such as television tuners and professional communications equipment. 3 4 DESCRIPTION g2 Enhancement type field-effect transistor in a plastic g1 microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and 2 1 substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. Top view MAM192 s,b Marking code: MC* * = - : made in Hong Kong CAUTION * = p : made in Hong Kong * = t : made in Malaysia The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline (SOT343R) and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage 7 V ID