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File name: | phb125n06l.pdf [preview phb125n06l] |
Size: | 56 kB |
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Mfg: | Philips |
Model: | phb125n06l 🔎 |
Original: | phb125n06l 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Philips phb125n06l.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 17-06-2020 |
User: | Anonymous |
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Extracted files: | 1 | |
File name phb125n06l.pdf Philips Semiconductors Product specification TrenchMOSTM transistor PHB125N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting Using 'trench' technology ID Drain current (DC)1 75 A the device features very low on-state Ptot Total power dissipation 250 W resistance and has integral zener Tj Junction temperature 175 |
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