File information: | |
File name: | am81214-030.pdf [preview am81214-030] |
Size: | 94 kB |
Extension: | |
Mfg: | ST |
Model: | am81214-030 🔎 am81214030 |
Original: | am81214-030 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST am81214-030.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 18-06-2020 |
User: | Anonymous |
Multipart: | No multipart |
Information about the files in archive: | ||
Decompress result: | OK | |
Extracted files: | 1 | |
File name am81214-030.pdf AM81214-030 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED RUGGEDIZED VSWR :1 . . LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 26 W MIN. WITH 7.2 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE BRANDING AM81214-030 81214-30 DESCRIPTION PIN CONNECTION The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures and is capable of withstanding :1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. The AM81214-030 is supplied in the IMPACTM Her- metic M etal/Ceramic package with i nternal 1. Collector 3. Emitter Input/Output matching structures. 2. Base 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25 |
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