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STP5N120 N-channel 1200 V, 2.7 4.7 A TO-220 , Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS(on) ID PW STP5N120 1200 V < 3.5 4.7 A 160 W 100% avalanche tested Extremely high dv/dt capability 3 2 ESD improved capability 1 New high voltage benchmark TO-220 Gate charge minimized Application Switching applications Figure 1. Internal schematic diagram Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs. Table 1. Device summary Order code Marking Package Packaging STP5N120 5N120 TO-220 Tube November 2009 Doc ID 13530 Rev 2 1/12 www.st.com 12 Contents STP5N120 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 13530 Rev 2 STP5N120 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 1200