ST mjd122 mjd127 free download

File name mjd122_mjd127.pdf

MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s LOW BASE-DRIVE REQUIREMENTS s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICAL SIMILAR TO TIP122 AND 3 TIP127 1 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER. DPAK TO-252 DESCRIPTION (Suffix "T4") The MJD122 and MJD127 form complementary NPN - PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R 2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbo l Parameter Valu e Un it NPN MJD122 PNP MJD127 V CBO Collector-Base Voltage (I E = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V V EBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 5 A I CM Collector Peak Current 8 A IB Base Current 100 mA P to t Total Dissipation at T case 25 o C 20 W o T stg Storage T emperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C June 1997 1/6 MJD122 MJD127 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 6.25