Philips bf1211 r wr free download

File name bf1211_r_wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; N-channel dual-gate MOS-FETs BF1211WR FEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTION admittance to input capacitance ratio 1 source Low noise gain controlled amplifier 2 drain Excellent low frequency noise performance 3 gate 2 Partly internal self-biasing circuit to ensure good 4 gate 1 cross-modulation performance during AGC and good DC stabilization. 4 handbook, 2 columns 3 APPLICATIONS Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. 1 2 Top view MSB014 DESCRIPTION BF1211 marking code: LFp Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes Fig.1 Simplified outline (SOT143B). between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. 3 handbook, 2 columns 4 handbook, halfpage 3 4 2 1 2 1 Top view MSB035 Top view MSB842 BF1211R marking code: LHp