ST std2nb60 free download

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STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET TYPE V DSS R DS(on) ID STD2NB60 600 V < 3.6 2.6 A s TYPICAL RDS(on) = 3.3 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED 3 2 3 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with IPAK DPAK outstanding performances. The new patent TO-251 TO-252 pending strip layout coupled with the Company's (Suffix "-1") (Suffix "T4") proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V DS Drain-source Voltage (V GS = 0) 600 V V DGR Drain- gate Voltage (R GS = 20 k) 600 V V GS Gate-source Voltage