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ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s MEDIUM VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 1 s SWITCH MODE POWER SUPPLIES 2 3 DESCRIPTION The device is manufactured using high voltage SOT-32 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting INTERNAL SCHEMATIC DIAGRAM applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V IC Collector Current 1.5 A I CM Collector Peak Current (tp < 5 ms) 3 A IB Base Current 0.75 A I BM Base Peak Current (t p < 5 ms) 1.5 A P t ot Total Dissipation at T c = 25 o C 40 W o T stg St orage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C January 1998 1/7 ST13003 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 3.12 C/W o R thj-a Thermal Resistance Junction-ambient Max 89 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Pa