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File name: | sty60nm50.pdf [preview sty60nm50] |
Size: | 283 kB |
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Mfg: | ST |
Model: | sty60nm50 🔎 |
Original: | sty60nm50 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST sty60nm50.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 19-06-2020 |
User: | Anonymous |
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File name sty60nm50.pdf STY60NM50 N-CHANNEL 500V - 0.045 - 60A Max247 Zener-Protected MDmeshTMPower MOSFET TYPE VDSS RDS(on) ID STY60NM50 500V < 0.05 60 A TYPICAL RDS(on) = 0.045 HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE 3 CHARGE 2 1 LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY'S LOWEST ON-RESISTANCE Max247 DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent INTERNAL SCHEMATIC DIAGRAM avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k) 500 V VGS Gate- source Voltage |
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