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2SD1991A(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 100 mA Dimensions in inches and (millimeters) PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 uless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 7 V Collector cut-off current ICBO VCB=20V,IE=0 1 A Emitter cut-off current IEBO VEB=7V,IC=0 1 A hFE(1) VCE=10V,IC=2mA 160 460 DC current gain hFE(2) VCE=2V,IC=100mA 90 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V Transition frequency fT VCE=10V,IC=2mA,f=200MHz 150 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 3.5 pF CLASSIFICATION OF hFE(1) Rank Q R S Range