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2SD1991A(NPN)
TO-92 Bipolar Transistors
1. EMITTER TO-92
2. COLLECTOR
3. BASE
Features
High foward current transfer ratio hFE
Low collector to emitter saturation voltage VCE(sat).
Allowing supply with the radial taping.
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 100 mA Dimensions in inches and (millimeters)
PC Collector Power Dissipation 400 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 uless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 7 V
Collector cut-off current ICBO VCB=20V,IE=0 1 A
Emitter cut-off current IEBO VEB=7V,IC=0 1 A
hFE(1) VCE=10V,IC=2mA 160 460
DC current gain
hFE(2) VCE=2V,IC=100mA 90
Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V
Transition frequency fT VCE=10V,IC=2mA,f=200MHz 150 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 3.5 pF
CLASSIFICATION OF hFE(1)
Rank Q R S
Range 160-260 210-340 290-460
2SD1991A(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
2SD1991A(NPN)
TO-92 Bipolar Transistors