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BUF410 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s HIGH VOLTAGE CAPABILITY s VERY HIGH SWITCHING SPEED s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: s SWITCH MODE POWER SUPPLIES 3 2 s MOTOR CONTROL 1 DESCRIPTION The BUF410 is manufactured using High Voltage TO-218 Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in INTERNAL SCHEMATIC DIAGRAM high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Un it V CEV Collector-Emitter Voltage (VBE = -1.5 V) 850 V V CEO Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 15 A I CM Collector Peak Current (tp < 5 ms) 30 A IB Base Current 3 A I BM Base Peak Current (tp < 5 ms) 4.5 A P tot T otal Dissipation at Tc = 25 o C 125 W o T s tg Storage Temperature -65 to 150 C o Tj Max O peration Junction Temperature 150 C o Tj Max. Operating Junction T emperature 150 C July 1997 1/6 BUF410 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-Case Max 1 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond it