GSME mmbt5401 free download

File name mmbt5401.pdf

Guilin Strong Micro-Electronics Co.,Ltd. GM5401 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -150 Vdc - Collector-Base Voltage VCBO -160 Vdc - Emitter-Base Voltage VEBO -5.0 Vdc - Collector Current--Continuous Ic -500 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation PD 225 mW FR-5 Board(1) TA=25 25 1.8 mW/ Derate above25 25 Thermal Resistance Junction to Ambient RJA 556 /W Total Device Dissipation PD 300 mW Alumina Substrate (2) TA=25 Derate above25 25 2.4 mW/ Thermal Resistance Junction to Ambient RJA 417 /W Junction and Storage Temperature TJ,Tstg 150, -55to+150 DEVICE MARKING GM5401=2L Guilin Strong Micro-Electronics Co.,Ltd. GM5401 ELECTRICAL CHARACTERISTICS (TA=25 25 unless otherwise noted 25) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(3) V(BR)CEO -150 -- Vdc -(Ic=-1.0mAdc,IB=0) Collector-Base Breakdown Voltage V(BR)CBO -160 -- Vdc -(Ic=-100Adc,IE=0) Emitter-Base Breakdown Voltage V(BR)EBO -5.0 -- Vdc (IE=-10Adc,Ic=0) Emitter Cutoff Current (VEB=-3.0Vdc,Ic=0) IEBO -- -50 nAdc Collector Cutoff Current ICBO -- -50 nAdc (VCB=-120Vdc,IE=0) DC Current Gain HFE -- (Ic=-1.0mAdc,VCE=-5.0Vdc) 50 -- (Ic=-10mAdc,VCE=-5.0Vdc) 60 240 (Ic=-50mAdc,VCE=-5.0Vdc) 30 -- Collector-Emitter Saturation Voltage - VCE(sat) Vdc (Ic=-10mAdc, IB=-1.0mAdc)