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Descr: . Electronic Components Datasheets Active components Transistors ST sty60nm60.pdf
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STY60NM60 N-CHANNEL 600V - 0.050 - 60A Max247 Zener-Protected MDmeshTMPower MOSFET TYPE VDSS RDS(on) ID STY60NM60 600V < 0.055 60 A TYPICAL RDS(on) = 0.050 HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE 2 3 CHARGE 1 LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY'S LOWEST ON-RESISTANCE Max247 DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent INTERNAL SCHEMATIC DIAGRAM avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STY60NM60 Y60NM60 Max247 TUBE July 2003 1/8 STY60NM60 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage

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