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File name: | tn0106.pdf [preview tn0106] |
Size: | 575 kB |
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Mfg: | Supertex |
Model: | tn0106 🔎 |
Original: | tn0106 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Supertex tn0106.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 21-06-2020 |
User: | Anonymous |
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File name tn0106.pdf Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold - 2.0V max. This low threshold, enhancement-mode (normally-off) transistor High input impedance utilizes a vertical DMOS structure and Supertex's well-proven, Low input capacitance - 50pF typical silicon-gate manufacturing process. This combination produces Fast switching speeds a device with the power handling capabilities of bipolar transistors Low on-resistance and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, Free from secondary breakdown this device is free from thermal runaway and thermally-induced Low input and output leakage secondary breakdown. Applications Supertex's vertical DMOS FETs are ideally suited to a wide range Logic level interfaces |
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