Philips bfr93aw free download

File name bfr93aw.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification 1995 Sep 18 Supersedes data of November 1992 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION 3 High power gain Silicon NPN transistor encapsulated handbook, 2 columns Gold metallization ensures in a plastic SOT323 (S-mini) package. excellent reliability The BFR93AW uses the same crystal as the SOT23 version, BFR93A. SOT323 (S-mini) package. PINNING APPLICATIONS 1 2 PIN DESCRIPTION It is designed for use in RF amplifiers, Top view MBC870 mixers and oscillators with signal 1 base Marking code: R2. frequencies up to 1 GHz. 2 emitter Fig.1 SOT323 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 15 V VCEO collector-emitter voltage open base 12 V IC collector current (DC) 35 mA Ptot total power dissipation up to Ts = 93 C; note 1 300 mW hFE DC current gain IC = 30 mA; VCE = 5 V 40 90 Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz; 0.6 pF Tamb = 25 C fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4 5 GHz GUM maximum unilateral power IC = 30 mA; VCE = 8 V; f = 1 GHz; 13 dB gain Tamb = 25 C IC = 30 mA; VCE = 8 V; f = 2 GHz;