ST buld1101e free download

File name buld1101e.pdf

BULD1101E High voltage fast-switching NPN Power Transistor General features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European 3 3 2 Directive 1 1 Description DPAK IPAK t( s) uc TO-252 TO-251 The device is manufactured using high voltage Multi-Epitaxial Planar technology for high d switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has P ro Internal schematic diagram te an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using le the transil protection usually necessary in typical so Ob converters for lamp ballast. Applications - (s) Electronic ballast for fluorescent lighting ct o du e Pr let so Order codes b O Part number BULD1101ET4 Marking BULD1101E Package DPAK Packaging Tape & reel BULD1101E-1 BULD1101E IPAK Tube May 2007 Rev 2 1/11 www.st.com 11 Electrical ratings BULD1101E 1 Electrical ratings