LGE 3dk2222a sot-23 free download

File name 3dk2222a_sot-23.pdf

3DK2222A SOT-23 Transistor(NPN) 1. BASE SOT-23 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 225 mW Tj Junction Temperature 150 Tstg Storage Temperature -55to+150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10A, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V Collector cut-off current ICBO VCB=70 V , IE=0 0.01 A Collector cut-off current ICEX VCE=60V, VBE(off)=3V 0.01 A Emitter cut-off current IEBO VEB= 3V, IC=0 0.01 A HFE(1) VCE=10V, IC= 150mA 100 300 DC current gain HFE(2) VCE=10V, IC= 0.1mA 40 HFE(3) VCE=10V, IC= 500mA 42 0.6 IC=500 mA, IB= 50mA Collector-emitter saturation voltage VCE(sat) 0.3 V IC=150 mA, IB=15mA Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V