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BULD118-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED APPLICATIONS: 3 s ELECTRONIC BALLASTS FOR 2 FLUORESCENT LIGHTING 1 s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION IPAK The device is manufactured using high voltage (TO-251) Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. INTERNAL SCHEMATIC DIAGRAM The device is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V IC Collector Current 2 A I CM Collector Peak Current (tp < 5 ms) 4 A IB Base Current 1 A I BM Base Peak Current (t p < 5 ms) 2 A o P t ot Total Dissipation at T c = 25 C 20 W o T stg St orage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C July 1997 1/7 BULD118-1 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-Case Max 6.25 C/W o R t hj- amb Thermal Resistance Junction-Ambient Max 100