Philips bfu725f n1 free download

File name bfu725f_n1.pdf

BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 -- 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features I Low noise high gain microwave transistor I Noise figure (NF) = 0.7 dB at 5.8 GHz I High maximum stable gain 27 dB at 1.8 GHz I 110 GHz fT silicon germanium technology 1.3 Applications I 2nd LNA stage and mixer stage in DBS LNB's I Satellite radio I Low noise amplifiers for microwave communications systems I WLAN and CDMA applications I Analog/digital cordless applications I Ka band oscillators (DRO's) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 10 V VCEO collector-emitter voltage open base - - 2.8 V VEBO emitter-base voltage open collector - - 0.55 V IC collector current - 25 40 mA Ptot total power dissipation Tsp 90