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2SC5344(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio power amplifier application High hFE : hFE=100~320 Complementary to 2SA1981 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified ) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = 0.1mA, IB=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 0.01mA, IC=0 5 V Collector cut-off current ICBO VCB=35V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A DC current gain hFE VCE=1V, IC= 100mA 100 320 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB=50mA 0.5 V Transition frequency fT VCE=5V, IC=10mA 120 MHz Collector Output Capacitance Cob VCB=10V,IE= 0,f=1MHz 13 pF CLASSIFICATION OF hFE Rank O Y Range 100-200 160-320 2SC5344(NPN) TO-92 Bipolar Transistors Typical Characteristics