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2SC5344(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
Audio power amplifier application
High hFE : hFE=100~320
Complementary to 2SA1981
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 800 mA
PC Collector Power Dissipation 625 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified )
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC = 0.1mA, IB=0 35 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 0.01mA, IC=0 5 V
Collector cut-off current ICBO VCB=35V , IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain hFE VCE=1V, IC= 100mA 100 320
Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB=50mA 0.5 V
Transition frequency fT VCE=5V, IC=10mA 120 MHz
Collector Output Capacitance Cob VCB=10V,IE= 0,f=1MHz 13 pF
CLASSIFICATION OF hFE
Rank O Y
Range 100-200 160-320
2SC5344(NPN)
TO-92 Bipolar Transistors
Typical Characteristics