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STD20NF10 N-channel 100V - 0.038 - 100A - DPAK Low gate charge STripFETTM II Power MOSFET Features Type VDSS RDS(on) ID STD20NF10 100V <0.045 25A(1) 1. Current limited by package 3 Exceptional dv/dt capability 1 Application oriented characterization DPAK Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- Figure 1. Internal schematic diagram efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Applications Switching applications Table 1. Device summary Part number Marking Package Packaging STD20NF10T4 D20NF10 DPAK Tape & reel August 2007 Rev 5 1/13 www.st.com 13 Contents STD20NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STD20NF10 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VDGR Drain-gate voltage (RGS = 20 k) 100