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STD20NF10
N-channel 100V - 0.038 - 100A - DPAK
Low gate charge STripFETTM II Power MOSFET
Features
Type VDSS RDS(on) ID
STD20NF10 100V <0.045 25A(1)
1. Current limited by package
3
Exceptional dv/dt capability 1
Application oriented characterization
DPAK
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
Figure 1. Internal schematic diagram
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Applications
Switching applications
Table 1. Device summary
Part number Marking Package Packaging
STD20NF10T4 D20NF10 DPAK Tape & reel
August 2007 Rev 5 1/13
www.st.com 13
Contents STD20NF10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STD20NF10 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 100 V
VDGR Drain-gate voltage (RGS = 20 k) 100 V
VGS Gate- source voltage