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STW6NC90Z N-CHANNEL 900V - 2.1 - 5.2A TO-247 Zener-Protected PowerMESHTMIII MOSFET TYPE VDSS RDS(on) ID STW6NC90Z 900 V < 2.5 5.2A s TYPICAL RDS(on) = 2.1 s EXTREMELY HIGH dv/dt CAPABILITY s GATE-TO-SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capabil- ity with higher ruggedness performance as request- ed by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 k) 900 V VGS Gate- source Voltage