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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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Descr: . Electronic Components Datasheets Active components Transistors Vishay si3850dv.pdf
Group:Electronics > Components > Transistors
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Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY FEATURES D 100% Rg Tested VDS (V) rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 N-Channel 20 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = -4.5 V -0.85 P-Channel P Channel -20 20 1.30 @ VGS = -3.0 V -0.75 S2 TSOP-6 Top View G2 G1 1 6 S1 D 2 5 D D G2 3 4 S2 G1 Ordering Information: Si3850DV-T1 S1 Si3850DV-T1--E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS "12 TA = 25_C 1.2 -0.85 Continuous Drain Current (TJ = 150_C) ID TA = 70_C 0.95 -0.65 A Pulsed Drain Current

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