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Si3850DV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY FEATURES
D 100% Rg Tested
VDS (V) rDS(on) (W) ID (A)
0.500 @ VGS = 4.5 V 1.2
N-Channel 20
0.750 @ VGS = 3.0 V 1.0
1.00 @ VGS = -4.5 V -0.85
P-Channel
P Channel -20
20
1.30 @ VGS = -3.0 V -0.75
S2
TSOP-6
Top View
G2
G1 1 6 S1
D 2 5 D D
G2 3 4 S2 G1
Ordering Information: Si3850DV-T1 S1
Si3850DV-T1--E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 20 -20
V
Gate-Source Voltage VGS "12
TA = 25_C 1.2 -0.85
Continuous Drain Current (TJ = 150_C) ID
TA = 70_C 0.95 -0.65
A
Pulsed Drain Current IDM 3.5 -2.5
Continuous Source Current (Diode Conduction) IS 1 -1
Maximum Power Dissipation TA = 25_C 1.25
PD W
(Surface Mounted on FR4 Board) TA = 70_C 0.8
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P- Channel Unit
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec) RthJA 100 _C/W
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70778 www.vishay.com
S-50132--Rev. D, 24-Jan-05 1
Si3850DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = VGS, ID = 250 mA N-Ch 0.6 1.5
Gate Threshold Voltage VGS(th) V
VDS = VGS, ID = -250 mA P-Ch -0.6 -1.5
Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA
VDS = 20 V, VGS = 0 V N-Ch 1
VDS = -20 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current IDSS mA
VDS = 20 V, VGS = 0 V, TJ = 70_C N-Ch 10
VDS = -20 V, VGS = 0 V, TJ = 70_C P-Ch -10
VDS = 5 V, VGS = 4.5 V N-Ch 3.0
On State Drain Currenta
On-State ID( )
D(on) A
VDS = -5 V, VGS = -4.5 V P-Ch -2.0
VGS = 4.5 V, ID = 0.5 A N-Ch 0.38 0.500
VGS = -4.5 V, ID = -0.5 A P-Ch 0.70 1.00
Drain Source On State Resistancea
Drain-Source On-State rDS( )
DS(on) W
VGS = 3.0 V, ID = 0.5 A N-Ch 0.55 0.750
VGS = -3.0 V, ID = -0.5 A P-Ch 1.10 1.30
VDS = 10 V, ID = 1.2 A N-Ch 2.7
Forward Transconductancea gf
fs S
VDS = -10 V, ID = -0.85 A P-Ch 1.2
IS = 1 A, VGS = 0 V N-Ch 1.2
Diode Forward Voltagea VSD V
IS = -1 A, VGS = 0 V P-Ch -1.2
Dynamicb
N-Ch 0.8 2.0
Total Gate Charge Qg
N-Channel P-Ch 1.10 2.5
VDS = 10 V VGS = 4 5 V ID = 1 2 A
V, 4.5 V, 1.2
N-Ch 0.25
Gate-Source
Gate Source Charge Qgs nC
P-Channel P-Ch 0.50
VDS = -10 V VGS = -4 5 V
V, -4.5
ID = -0.85 A N-Ch 0.2
Gate-Drain
Gate Drain Charge Qgd
d
P-Ch 0.2
N-Ch 0.3 1.5
Gate Resistance Rg W
P-Ch 3 16
N-Ch 10 20
Turn-On
Turn On Delay Time td( )
d(on)
P-Ch 8 15
N-Channel
N Channel
VDD = 10 V, RL = 10 W N-Ch 20 40
Rise Time tr
ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W P-Ch 20 40
P Channel
P-Channel N-Ch 20 40
Turn Off Delay Time
Turn-Off td( ff)
d(off) VDD = -10 V, RL = 10 W
10 V ns
P-Ch 10 20
ID ^ -1 A, VGEN = -4.5 V, Rg = 6 W
N-Ch 16 30
Fall Time tf
P-Ch 8 15
IF = 1 A, di/dt = 100 A/ms N-Ch 40 80
Source-Drain
Source Drain Reverse Recovery Time trr
IF = -1 A, di/dt = 100 A/ms P-Ch 40 80
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com Document Number: 70778
2 S-50132--Rev. D, 24-Jan-05
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL
Output Characteristics Transfer Characteristics
3.5 3.5
VGS = 5.0 thru 4.0 V 3.5 V
TC = -55_C
3.0 3.0
25_C
2.5 2.5
I D - Drain Current (A)
I D - Drain Current (A)
3.0 V 125_C
2.0 2.0
1.5 1.5
2.5 V
1.0 1.0
0.5 1.5 V 2.0 V 0.5
0.0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.7 120
VGS = 3.0 V
r DS(on)- On-Resistance ( W )
0.6 100
C - Capacitance (pF)
0.5 VGS = 4.5 V
80 Ciss
0.4
60 Coss
0.3
40
0.2
20 Crss
0.1
0.0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 2.0
VGS = 10 V VGS = 4.5 V
V GS - Gate-to-Source Voltage (V)
ID = 1.2 A ID = 1.2 A
4 1.6
rDS(on) - On-Resiistance
(Normalized)
3 1.2
2 0.8
1 0.4
0 0.0
0.0 0.2 0.4 0.6 0.8 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 70778 www.vishay.com
S-50132--Rev. D, 24-Jan-05 3
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
4.0 0.8
r DS(on)- On-Resistance ( W )
I S - Source Current (A)
0.6
TJ = 150_C
1.0
0.4
TJ = 25_C 0.2 ID = 1.2 A
0.1 0.0
0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.2 30
0.1
24
VGS(th) Variance (V)
ID = 250 mA
-0.0
Power (W)
18
-0.1
12
-0.2
6
-0.3
-0.4 0
-50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 100_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70778
4 S-50132--Rev. D, 24-Jan-05
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL
Output Characteristics Transfer Characteristics
2.5 2.5
TC = -55_C
VGS = 5.0 thru 4.0 V
2.0 3.5 V 2.0
25_C
I D - Drain Current (A)
I D - Drain Current (A)
1.5 1.5
3.0 V
125_C
1.0 1.0
2.5 V
0.5 0.5
2.0 V
0.0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
2.0 120
VGS = 3.0 V
r DS(on)- On-Resistance ( W )
100
1.6
C - Capacitance (pF)
Ciss
80
1.2
60 Coss
VGS = 4.5 V
0.8
40
Crss
0.4 20
0.0 0
0.0 0.5 1.0 1.5 2.0 2.5 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
8 2.0
VGS = 10 V VGS = 4.5 V
V GS - Gate-to-Source Voltage (V)
ID = 0.85 A ID = 0.85 A
1.6
6
rDS(on) - On-Resiistance
(Normalized)
1.2
4
0.8
2
0.4
0 0.0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 70778 www.vishay.com
S-50132--Rev. D, 24-Jan-05 5
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
4.0 2.0
r DS(on)- On-Resistance ( W )
I S - Source Current (A)
1.5
TJ = 150_C
1.0
1.0
TJ = 25_C
0.5 ID =0.85 A
0.1 0.0
0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 30
0.3
24
VGS(th) Variance (V)
0.2
Power (W)
ID = 250 mA
18
0.1
12
0.0
6
-0.1
-0.2 0
-50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
Notes:
0.1 PDM
0.1
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 100_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70778.
www.vishay.com Document Number: 70778
6 S-50132--Rev. D, 24-Jan-05
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1