ST sts1dn45k3 free download

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STS1DN45K3 Dual N-channel 450 V, 3.2 , 0.5 A SuperMESH3TM Power MOSFET in SO-8 Preliminary data Features RDS(on) Type VDSS ID Pw max STS1DN45K3 450 V < 3.8 0.5 A 1.7 W 100% avalanche tested Low input capacitances and gate charge SO-8 Low gate input resistance Application Switching applications Description Figure 1. Internal schematic diagram SuperMESH3TM is a new Power MOSFET technology that is obtained via improvements applied to STMicroelectronics' SuperMESHTM technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Order codes Marking Packages Packaging STS1DN45K3 1ll45 SO-8 Tape and reel April 2010 Doc ID 17338 Rev 1 1/10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 10 change without notice. Contents STS1DN45K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits ... 6 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 Doc ID 17338 Rev 1 STS1DN45K3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source volta