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STS1DN45K3
Dual N-channel 450 V, 3.2 , 0.5 A SuperMESH3TM
Power MOSFET in SO-8
Preliminary data
Features
RDS(on)
Type VDSS ID Pw
max
STS1DN45K3 450 V < 3.8 0.5 A 1.7 W
100% avalanche tested
Low input capacitances and gate charge
SO-8
Low gate input resistance
Application
Switching applications
Description
Figure 1. Internal schematic diagram
SuperMESH3TM is a new Power MOSFET
technology that is obtained via improvements
applied to STMicroelectronics' SuperMESHTM
technology combined with a new optimized
vertical structure. The resulting product has an
extremely low on resistance, superior dynamic
performance and high avalanche capability,
making it especially suitable for the most
demanding applications.
Table 1. Device summary
Order codes Marking Packages Packaging
STS1DN45K3 1ll45 SO-8 Tape and reel
April 2010 Doc ID 17338 Rev 1 1/10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 10
change without notice.
Contents STS1DN45K3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuits .............................................. 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2/10 Doc ID 17338 Rev 1
STS1DN45K3 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 450 V
VGS Gate-source voltage