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BU810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN DARLINGTON s LOW BASE-DRIVE REQUIREMENTS s FAST SWITCHING SPEED s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s HORIZONTAL DEFLECTION FOR 3 MONOCHROME TVs 2 1 s GENERAL PURPOSE SWITCHING DESCRIPTION TO-220 The BU810 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM R = 200 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 600 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 7 A I CM Collector Peak Current 10 A IB Base Current 2 A P tot Total Power Dissipation at T case 25 C o 75 W o T stg Storage Temperature -65 to 150 C o Tj Junction Temperature 150 C June 1997 1/4 BU810 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1.66 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CES Collector Cut-off V CE = 600 V 200